Jimin Shang, Shuai Zhang, Yongqiang Wang, Hongyu Wen, Zhongming Wei, "Electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices," Chin. Opt. Lett. 17, 020010 (2019)
- Chinese Optics Letters
- Vol. 17, Issue 2, 020010 (2019)
Fig. 1. (a) Top and (b) side view of the SnS 2 ZrS 2
Fig. 2. Band structures and the projected density of states (PDOS) of the (a) SnS 2 ZrS 2
Fig. 3. Top and side view of the AA, AB, and AC stacking of the ZrS 2 / SnS 2
Fig. 4. (a) Projected band structure of the ZrS 2 / SnS 2 ZrS 2 SnS 2
Fig. 5. Optical absorption coefficient of the isolated monolayers and the heterostructure.
Fig. 6. (a) and (b) are the projected band structures under the electric field 0.4 V/Å and − 0.4 V / Å
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