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    Journals >Laser & Optoelectronics Progress >Volume 61 >Issue 21 >Page 2104001 > Article
    • Laser & Optoelectronics Progress
    • Vol. 61, Issue 21, 2104001 (2024)
    Effect of Groove Ring Depth in the Multiplication Region on the Performance of a Bonded InGaAs/Si Avalanche Photodiode
    Juan Zhang, Jingjing Long, and Shaoying Ke*
    Author Affiliations
  • Key Laboratory of Light Field Manipulation and System Integration Applications in Fujian Province, College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, Fujian , China
    • show less
    DOI: 10.3788/LOP240498 Cite this Article Set citation alerts
    Juan Zhang, Jingjing Long, Shaoying Ke. Effect of Groove Ring Depth in the Multiplication Region on the Performance of a Bonded InGaAs/Si Avalanche Photodiode[J]. Laser & Optoelectronics Progress, 2024, 61(21): 2104001 Copy Citation Text show less
    Device structure of InGaAs/Si APD with groove ring
    Fig. 1. Device structure of InGaAs/Si APD with groove ring
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    Influence of different groove depths on InGaAs/Si APD. (a) Avalanche voltage; (b) photocurrent and dark current; (c) photocurrent and dark current at 95% avalanche voltage
    Fig. 2. Influence of different groove depths on InGaAs/Si APD. (a) Avalanche voltage; (b) photocurrent and dark current; (c) photocurrent and dark current at 95% avalanche voltage
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    Variation of InGaAs/Si APD recombination rate with groove depth in uncharged layer. (a) Structural diagram; (b) data diagram
    Fig. 3. Variation of InGaAs/Si APD recombination rate with groove depth in uncharged layer. (a) Structural diagram; (b) data diagram
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    Variation of carrier concentration with groove depth in chargeless layer InGaAs/Si APD. (a) Electron concentration structure diagram; (b) electron concentration curve diagram; (c) hole concentration structure diagram; (d) hole concentration curve diagram
    Fig. 4. Variation of carrier concentration with groove depth in chargeless layer InGaAs/Si APD. (a) Electron concentration structure diagram; (b) electron concentration curve diagram; (c) hole concentration structure diagram; (d) hole concentration curve diagram
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    Influence of different groove depths on InGaAs/Si APD. (a) Valence band; (b) conduction band; (c) charge concentration
    Fig. 5. Influence of different groove depths on InGaAs/Si APD. (a) Valence band; (b) conduction band; (c) charge concentration
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    Variation of InGaAs/Si APD with groove depth in an uncharged layer. (a) Structure diagram of impact ionization; (b) data diagram of impact ionization rate; (c) electron impact ionization coefficient; (d) hole impact ionization coefficient
    Fig. 6. Variation of InGaAs/Si APD with groove depth in an uncharged layer. (a) Structure diagram of impact ionization; (b) data diagram of impact ionization rate; (c) electron impact ionization coefficient; (d) hole impact ionization coefficient
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    Variation of electric field with groove depth in uncharged layer InGaAs/Si APD. (a) Structure diagram; (b) data diagram
    Fig. 7. Variation of electric field with groove depth in uncharged layer InGaAs/Si APD. (a) Structure diagram; (b) data diagram
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    Influence of different groove depths on InGaAs/Si APD. (a) Gain; (b) gain at 95% avalanche voltage; (c) 3 dB bandwidth; (d) 3 dB bandwidth under 95% avalanche voltage
    Fig. 8. Influence of different groove depths on InGaAs/Si APD. (a) Gain; (b) gain at 95% avalanche voltage; (c) 3 dB bandwidth; (d) 3 dB bandwidth under 95% avalanche voltage
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    Variation of carrier concentration in charge free InGaAs/Si APD with groove depth. (a) Electron velocity structure diagram; (b) electron velocity data diagram; (c) hole velocity structure diagram; (d) hole velocity data diagram
    Fig. 9. Variation of carrier concentration in charge free InGaAs/Si APD with groove depth. (a) Electron velocity structure diagram; (b) electron velocity data diagram; (c) hole velocity structure diagram; (d) hole velocity data diagram
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    Variation of InGaAs/Si APD GBP with voltage at different groove depths
    Fig. 10. Variation of InGaAs/Si APD GBP with voltage at different groove depths
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    Parameters of electrons and holesi-InGaAsc-Si
    Thickness /nm1080500
    Permittivity13.911.8
    Electron affinity /eV4.54.17
    Electron， hole lifetime /s1.0×10-8/1.0×10-81.0×10-7/1.0×10-7
    Band gap /eV0.751.08
    Effective conduction band density /cm-31.52×10172.8×1019
    Effective valence band density /cm-38.12×10181.04×1019
    Electron， hole mobility /（cm2·V-1·s-1）14200/4001350/495
    an1，an22.27×106/2.27×1067.03×105/7.03×105
    ap1，ap23.95×106/3.95×1066.71×105/1.582×106
    bn1，bn21.13×106/1.13×1061.231×106/1.231×106
    bp1，bp21.45×106/1.45×1061.693×106/2.036×106
    betan/betap1.0/1.02.0/1.0
    Egran-14.0×105
    Table 1. Material parameters of InGaAs/Si APD
    Abstract
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    Juan Zhang, Jingjing Long, Shaoying Ke. Effect of Groove Ring Depth in the Multiplication Region on the Performance of a Bonded InGaAs/Si Avalanche Photodiode[J]. Laser & Optoelectronics Progress, 2024, 61(21): 2104001
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