The influence of growth temperature on the properties of aluminum nitride(AlN) films are grown by plasma enhanced atomic layer deposition(PEALD) at different deposition temperature. NH3 and trimethylaluminum(TMA) were used as precursors, 200, 500, 800, 1 000, 1 500 cycles AlN layers were deposited at 300 ℃, 350 ℃ and 370 ℃, the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370 ℃.