Guozhi WANG, Yong LIU, Jian WANG, Wei ZHU, Zhoushuo CHU. Drawing Design Optimization of IGZO TFT[J]. Optoelectronic Technology, 2021, 41(3): 218
- Optoelectronic Technology
- Vol. 41, Issue 3, 218 (2021)
Fig. 1. Bottom gate of anti-overlapping TFT structure
Fig. 2. The design drawings of HT
Fig. 3. The design of channel drawing 5 mask and 4 mask
Fig. 4. The critical value of HT zone
Fig. 5. The influence trend of L and a on the value of b
Fig. 6. Film thickness trend
Fig. 7. The SEM picture of channel area after photoetching
Fig. 8. The SEM picture of channel area after ashing
Fig. 9. The influence trend of L on the value of c
Fig. 10. The picture of channel area after photoetching
Fig. 11. The SEM picture of channel area after etching
Fig. 12. The picture of channel area after etching and stripping
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Table 1. The channel length and compensation values for TFT
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Table 2. The effect of channel length L and compensation value a for the indentation of photoresist
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Table 3. The thickness of photoresist in TFT channel
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Table 4. The effect of channel length L for the trail of photoresist
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Table 5. The channel length and width values after etching and stripping
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