Non-hydrogen silicon carbide (SiC) films were deposited on germanium substrate by pulsed laser deposition. The effects of laser energy on the microstructure, composition and infrared optical properties of SiC films were investigated. The infrared transmittance spectrums of SiC films were measured by Fourier transform infrared spectroscopy (FTIR). The spectroscopy analysis showed that the characteristic absorption peak of Si-C bonding was found at 785 cm-1, and the SiC films had good transmittance in the range of 4 000-1 300 cm-1. The optical constants of the SiC films were derived by fitting transmittance spectrum curves. It was found that the refractive index and the extinction coefficient of SiC films increased monotonicly with laser energies increasing in the range of 2.5-7.7 μm. The refractive index changed from 2.15 to 2.33 as laser energies increased from 400 mJ to 600 mJ. The extinction coefficient was of the order of 10-3 when laser energies were of 400 mJ and 500 mJ. This study indicates that the SiC film is an excellent optical film material between 2.5 μm to 7.7 μm.