Antimonide materials are the ideal system for the semiconductor photoelectric materials and devices of 2-4 μm due to its narrow bandgap. In recent years, great progress has been made in the research of antimonide high-power semiconductor lasers at home and abroad, and the room temperature operation of high-power single-tube and array lasers has been achieved. However, due to the incompatibility of antimonide materials with common fabrication technique of semiconductor single-mode lasers, only a few research institutes and companies have mastered the preparation of antimonide single-mode lasers. In this paper, the basic principle of the laterally coupled distributed feedback laser was introduced and the key technologies of the laser were briefly analyzed. The design scheme and preparation technology of the antimony single mode laser were also reviewed and summarized.