• Infrared and Laser Engineering
  • Vol. 51, Issue 7, 20210688 (2022)
Changda Zhang1,2, Mingyou Gao1, Yan Zhou3, Xiaozhou Deng1..., Xin Xiong1, Fenglei Liu1 and Weiguo Zhang1,*|Show fewer author(s)
Author Affiliations
  • 1Research Center for Micro-Nano Manufacturing and System Integration, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China
  • 2School of Information Science and Engineering, Chongqing Jiaotong University, Chongqing 400074, China
  • 3Tianjin Jinhang Institute of Technical Physics, Tianjin 300308, China
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    DOI: 10.3788/IRLA20210688 Cite this Article
    Changda Zhang, Mingyou Gao, Yan Zhou, Xiaozhou Deng, Xin Xiong, Fenglei Liu, Weiguo Zhang. Preparation method of silicon-based aspheric cylindrical microlens array[J]. Infrared and Laser Engineering, 2022, 51(7): 20210688 Copy Citation Text show less
    Silicon lens preparation process
    Fig. 1. Silicon lens preparation process
    Influence of spin-coating speed on photoresist thickness and surface uniformity of adhesive layer
    Fig. 2. Influence of spin-coating speed on photoresist thickness and surface uniformity of adhesive layer
    Comparison of bubble defects on the lens surface after etching. (a) 90 ℃ constant temperature baking for single coating; (b) 22-90 ℃ gradient baking for single coating; (c) 22-90 ℃ gradient baking for secondary coating
    Fig. 3. Comparison of bubble defects on the lens surface after etching. (a) 90 ℃ constant temperature baking for single coating; (b) 22-90 ℃ gradient baking for single coating; (c) 22-90 ℃ gradient baking for secondary coating
    Photoresist coating experiment for multiple times
    Fig. 4. Photoresist coating experiment for multiple times
    Mask pattern size
    Fig. 5. Mask pattern size
    Surface topography after photolithography. (a) One moving exposure; (b) Cycle moving exposure
    Fig. 6. Surface topography after photolithography. (a) One moving exposure; (b) Cycle moving exposure
    Mask layout correction principle
    Fig. 7. Mask layout correction principle
    Surface morphology of Si etched by different CHF3 flow rates. (a) 20 sccm; (b) 30 sccm; (c) 40 sccm; (d) 40 sccm cyclic etching
    Fig. 8. Surface morphology of Si etched by different CHF3 flow rates. (a) 20 sccm; (b) 30 sccm; (c) 40 sccm; (d) 40 sccm cyclic etching
    Influence of different CHF3 gas flow rate on the etching speed of silicon and photoresist
    Fig. 9. Influence of different CHF3 gas flow rate on the etching speed of silicon and photoresist
    Comparison of surface roughness of silicon lens. (a) Single etching; (b) Cyclic etching
    Fig. 10. Comparison of surface roughness of silicon lens. (a) Single etching; (b) Cyclic etching
    Large numerical aperture aspheric silicon micro cylindrical lens. (a) Real image of lens; (b) AFM; (c)-(d) SEM surface morphology; (e) Fitting diagram of effective caliber curve
    Fig. 11. Large numerical aperture aspheric silicon micro cylindrical lens. (a) Real image of lens; (b) AFM; (c)-(d) SEM surface morphology; (e) Fitting diagram of effective caliber curve
    Changda Zhang, Mingyou Gao, Yan Zhou, Xiaozhou Deng, Xin Xiong, Fenglei Liu, Weiguo Zhang. Preparation method of silicon-based aspheric cylindrical microlens array[J]. Infrared and Laser Engineering, 2022, 51(7): 20210688
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