• Matter and Radiation at Extremes
  • Vol. 8, Issue 3, 035901 (2023)
X. H. Yang1,2, Z. H. Chen1, H. Xu2,3, Y. Y. Ma2,4..., G. B. Zhang1, D. B. Zou5 and F. Q. Shao5|Show fewer author(s)
Author Affiliations
  • 1Department of Nuclear Science and Technology, National University of Defense Technology, Changsha 410073, China
  • 2Collaborative Innovation Center of IFSA, Shanghai Jiao Tong University, Shanghai 200240, China
  • 3School of Computer Science, National University of Defense Technology, Changsha 410073, China
  • 4College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
  • 5Department of Physics, National University of Defense Technology, Changsha 410073, China
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    DOI: 10.1063/5.0137973 Cite this Article
    X. H. Yang, Z. H. Chen, H. Xu, Y. Y. Ma, G. B. Zhang, D. B. Zou, F. Q. Shao. Hybrid PIC–fluid simulations for fast electron transport in a silicon target[J]. Matter and Radiation at Extremes, 2023, 8(3): 035901 Copy Citation Text show less

    Abstract

    Ultra-intense laser-driven fast electron beam propagation in a silicon target is studied by three-dimensional hybrid particle-in-cell–fluid simulations. It is found that the transverse spatial profile of the fast electron beam has a significant influence on the propagation of the fast electrons. In the case of a steep spatial profile (e.g., a super-Gaussian profile), a tight fast electron beam is produced, and this excites more intense resistive magnetic fields, which pinch the electron beam strongly, leading to strong filamentation of the beam. By contrast, as the gradient of the spatial profile becomes more gentle (e.g., in the case of a Lorentzian profile), the resistive magnetic field and filamentation become weaker. This indicates that fast electron propagation in a solid target can be controlled by modulating the spatial gradient of the laser pulse edge.
    fh,e,it+vfh,e,ix+qh,e,i(E+v×B)fh,e,ip=fh,e,itc,

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    dxdt=v,

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    dpdt=e(E+v×B)+δpdt,

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    dp=Δpdt=Znee44πϵ02mev2lnΛddt;

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    dθ=Δθ21/2dW=Z2nee42πϵ02γmep3lnΛsdt1/2Γ(t),

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    E=u×B+ηJpeene,

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    Bt=×E.

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    Bt=×(u×B)×(ηJ)+Te×neene.

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    t(CveTe)=ηJe2+(κTe)+Qh+Qie.

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    t(CviTi)=Qei,

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    d>d1,L>2r0sin12θ+L2.

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    X. H. Yang, Z. H. Chen, H. Xu, Y. Y. Ma, G. B. Zhang, D. B. Zou, F. Q. Shao. Hybrid PIC–fluid simulations for fast electron transport in a silicon target[J]. Matter and Radiation at Extremes, 2023, 8(3): 035901
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