Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra

Cizhe Fang; Yan Liu; Qingfang Zhang; Genquan Han; Xi Gao; Yao Shao; Jincheng Zhang; Yue Hao

doi:10.29026/oea.2018.180004

Journals >Opto-Electronic Advances >Volume 1 >Issue 3 >Page 180004 > Article

Opto-Electronic Advances
Vol. 1, Issue 3, 180004 (2018)

Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra

Cizhe Fang¹, Yan Liu¹, Qingfang Zhang², Genquan Han^1,*..., Xi Gao¹, Yao Shao³, Jincheng Zhang¹ and Yue Hao¹|Show fewer author(s)

Author Affiliations

¹Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, China

²Key Laboratory for Informatization Electrical Appliances of Henan Province, School of Electric and Information Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China

³State Key Laboratory of Power Grid Security and Energy Conservation, China Electric Power Research Institute, Beijing 100192, China

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DOI: 10.29026/oea.2018.180004 Cite this Article

Cizhe Fang, Yan Liu, Qingfang Zhang, Genquan Han, Xi Gao, Yao Shao, Jincheng Zhang, Yue Hao. Germanium-tin alloys: applications for optoelectronics in mid-infrared spectra[J]. Opto-Electronic Advances, 2018, 1(3): 180004 Copy Citation Text

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Abstract

We summarize our work of the optoelectronic devices based on Germanium-tin (GeSn) alloys assisted with the Si3N4 liner stressor in mid-infrared (MIR) domains. The device characteristics are thoroughly analyzed by the strain distribution, band structure, and absorption characteristics. Numerical and analytical methods show that with optimal structural parameters, the device performance can be further improved and the wavelength application range can be extended to 2~5 μm in the mid-infrared spectra. It is demonstrated that this proposed strategy provides an effective technique for the strained-GeSn devices in future optical designs, which will be competitive for the optoelectronics applications in mid-infrared wavelength.

Keywords

Genquan Han|optoelectronics germanium-tin alloys mid-infrared spectra

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