Electronic and Optical Properties of Low-Concentration Ge Doping and Substitution of Sn and Ge for CsPbI3

Dengqi Zhang; Hanmin Tian; Quanmin He; Xiaoya Song; Wenfang Liu; Yuerong Wang

doi:10.3788/LOP221606

Journals >Laser & Optoelectronics Progress >Volume 60 >Issue 15 >Page 1516002 > Article

Laser & Optoelectronics Progress
Vol. 60, Issue 15, 1516002 (2023)

Electronic and Optical Properties of Low-Concentration Ge Doping and Substitution of Sn and Ge for CsPbI₃

Dengqi Zhang¹, Hanmin Tian^1,2,*, Quanmin He¹, Xiaoya Song¹..., Wenfang Liu¹ and Yuerong Wang¹|Show fewer author(s)

Author Affiliations

¹School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China

²Tianjin Key Laboratory of Electronic Materials and Device, Tianjin 300401, China

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DOI: 10.3788/LOP221606 Cite this Article Set citation alerts

Dengqi Zhang, Hanmin Tian, Quanmin He, Xiaoya Song, Wenfang Liu, Yuerong Wang. Electronic and Optical Properties of Low-Concentration Ge Doping and Substitution of Sn and Ge for CsPbI₃[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1516002 Copy Citation Text

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