The design of new material structure is an effective way to improve the performance of the infrared detector. Antimony-based type-II superlattice InAs/InAsSb, as infrared photosensitive material, has stable structure, low dark current, high temperature operating characteristics and superior photoelectric conversion efficiency, which is the ideal material for developing infrared detectors at high temperature. This paper reviews the research progress of antimony-based type-II super-lattices InAs/InAsSb, introduces the performance of two kinds of infrared detectors applied in typical unipolar barrier structures, and prospects the development of antimony-based type-II superlattice InAs/InAsSb.