Pengfei Du, Wei Ye, Sheng Xiao, Mengfei Li. Research Progress of Antimony-Based Type-II Superlattice InAs/InAsSb Infrared Detector[J]. Laser & Optoelectronics Progress, 2022, 59(17): 1700004
- Laser & Optoelectronics Progress
- Vol. 59, Issue 17, 1700004 (2022)
![Schematic diagram of superlattice of semiconductor materials. (a) Periodic change of impurity in single crystal semiconductor; (b) periodic change of alloy composition[20]](/richHtml/lop/2022/59/17/1700004/img_01.jpg)
Fig. 1. Schematic diagram of superlattice of semiconductor materials. (a) Periodic change of impurity in single crystal semiconductor; (b) periodic change of alloy composition[20]
![Bandgap structure of type-Ⅱ InAs/GaSb strained layer superlattice[22]](/richHtml/lop/2022/59/17/1700004/img_02.jpg)
Fig. 2. Bandgap structure of type-Ⅱ InAs/GaSb strained layer superlattice[22]
Fig. 3. Schematic diagram of the band alignment between InAs and InAsSb. (a) InAs1-xsbx superlattice structure with low Sb component and ordered arrangement; (b) InAs/InAs0.93Sb0.07 structure grown on InAs substrate; (c) mass reduction results for two transitions
Fig. 4. Schematic diagram of device structure. (a) NBN structure detector; (b) energy band diagram ideal NBN structure under reverse bias
Fig. 5. Schematic diagram of the device structure. (a) P+-N-N+ structure detector; (b) PBN structure detector; (c) double barrier PBN structure detector
Fig. 6. Schematic diagram of band structure of device. (a) PBP structure; (b) CBIRD structure
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