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    Journals >Journal of Inorganic Materials >Volume 39 >Issue 8 >Page 903 > Article
    • Journal of Inorganic Materials
    • Vol. 39, Issue 8, 903 (2024)
    Interface Layer of Te-based Thermoelectric Device: Abnormal Growth and Interface Stability
    Xin MIAO1, Shiqiang YAN1, Jindou WEI1, Chao WU1..., Wenhao FAN2 and Shaoping CHEN1,*|Show fewer author(s)
    Author Affiliations
  • 11. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China
  • 22. College of Physics, Taiyuan University of Technology, Taiyuan 030024, China
    • show less
    DOI: 10.15541/jim20240057 Cite this Article
    Xin MIAO, Shiqiang YAN, Jindou WEI, Chao WU, Wenhao FAN, Shaoping CHEN. Interface Layer of Te-based Thermoelectric Device: Abnormal Growth and Interface Stability[J]. Journal of Inorganic Materials, 2024, 39(8): 903 Copy Citation Text show less
    Microstructure and composition of Te0.985Sb0.015 precursor powder
    1. Microstructure and composition of Te0.985Sb0.015 precursor powder
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    Composition and lattice parameters of NixTe samples
    2. Composition and lattice parameters of NixTe samples
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    (a) Thicknesses of the interface reaction layers (IRLs) at the Te0.985Sb0.015/NixTe interfaces, and (b) formation Gibbs free energies in molar (ΔrGT) of the interface products at the Te0.985Sb0.015/NixTe interfaces
    3. (a) Thicknesses of the interface reaction layers (IRLs) at the Te0.985Sb0.015/NixTe interfaces, and (b) formation Gibbs free energies in molar (ΔrGT) of the interface products at the Te0.985Sb0.015/NixTe interfaces
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    Diagram of the growth of the interface reaction layer (IRL) at Te/NiTe2-m interface
    4. Diagram of the growth of the interface reaction layer (IRL) at Te/NiTe2-m interface
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    Microstructures of Te0.985Sb0.015/NixTe interfaces after aging at 473 K for 6 and 12 d
    5. Microstructures of Te0.985Sb0.015/NixTe interfaces after aging at 473 K for 6 and 12 d
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    Performance of NixTe/Te0.985Sb0.015/NixTe (x=0.500, 0.563, 0.667) single-leg devices
    6. Performance of NixTe/Te0.985Sb0.015/NixTe (x=0.500, 0.563, 0.667) single-leg devices
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    Fracture microstructure and element distribution of sintered Te0.985Sb0.015
    S1. Fracture microstructure and element distribution of sintered Te0.985Sb0.015
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    Thermoelectric performance of Te0.985Sb0.015 in the direction parallel to the sintering pressure
    S2. Thermoelectric performance of Te0.985Sb0.015 in the direction parallel to the sintering pressure
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    Electrical performance of NixTe samples
    S3. Electrical performance of NixTe samples
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    Microstructures and element distributions of sintered Te0.985Sb0.015/NixTe interfaces
    S4. Microstructures and element distributions of sintered Te0.985Sb0.015/NixTe interfaces
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    Backscatter SEM image of sintered Te0.985Sb0.015/Ni interface
    S5. Backscatter SEM image of sintered Te0.985Sb0.015/Ni interface
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    Performance of Ni0.5Te/Te0.985Sb0.015/Ni0.5Te single-leg devices under a temperature difference of 180 K (Hot end: 473 K, Cold end: 293 K)
    S6. Performance of Ni0.5Te/Te0.985Sb0.015/Ni0.5Te single-leg devices under a temperature difference of 180 K (Hot end: 473 K, Cold end: 293 K)
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    Aging-time dependent performance of Ni0.5Te/Te0.985Sb0.015/Ni0.5Te single-leg devices under a temperature difference of 180 K (Hot end: 473 K, Cold end: 293 K)
    S7. Aging-time dependent performance of Ni0.5Te/Te0.985Sb0.015/Ni0.5Te single-leg devices under a temperature difference of 180 K (Hot end: 473 K, Cold end: 293 K)
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    Total migration of atomsx=0.500 x=0.563 x=0.667 x=0.833 x=0.908 Te0.985Sb0.015/Ni
    CN·l/(mol·cm-2)00.12970.21340.28100.31540.5653
    Table 1. Total migration of atoms (CN·l) at Te0.985Sb0.015/NixTe interface
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    Phase lableFormula inreference Formulaused here Temperature/KST/(J·mol-1·K-1) HT/(kJ·mol-1) GT/(kJ·mol-1) Ref.
    δ(-NiTe2-x,52.2%-66.7%(in atom) Te)Ni0.476Te0.524Ni0.908Te298.1576.393-51.908-74.685[40]
    600.00112.729-36.120-103.758
    700.00121.397-30.494-115.472
    Ni0.4Te0.6Ni0.667Te298.1566.917-47.833-67.785[40]
    600.0098.732-33.987-93.226
    700.00106.415-29.000-103.491
    Ni0.333Te0.667Ni0.5Te298.1560.135-43.778-61.707[40]
    600.0088.253-31.552-84.504
    700.0095.001-27.172-93.673
    TeTeTe298.1549.4970.000-14.757[41]
    600.0069.5378.766-32.956
    700.0074.69412.114-40.171
    NiNiNi298.1529.8740.000-8.907[41]
    600.0050.4199.008-21.243
    700.0055.54612.326-26.557
    Table 1. Thermodynamic data. Values of entropy (ST), enthalpy (HT), and Gibbs free energy (GT) at 298.15, 600.00 and 700.00 K, respectively
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    Chemical reaction equationTemperature/KΔrST/(J·mol-1·K-1) ΔrHT/(kJ·mol-1) ΔrGT/(kJ·mol-1)
    0.25Te+0.75Ni0.667Te→Ni0.5Te298.15-2.427-7.903-7.180
    600.00-3.180-8.253-6.345
    700.00-3.484-8.451-6.012
    0.449Te+0.551Ni0.908Te→Ni0.5Te298.15-4.182-15.177-13.930
    600.00-5.083-15.586-12.536
    700.00-5.426-15.809-12.010
    1.5Ni+Te→Ni1.5Te298.155.692-57.500-59.197
    600.005.969-57.318-60.899
    700.008.110-56.023-61.700
    Table 2. Molar formation Gibbs free energies (ΔrGT) of interface products at 298.15, 600.00 and 700.00 K, respectively
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    ItemNiTe2(Ni0.5Te) NiTe1.776(Ni0.563Te) NiTe1.5(Ni0.667Te) NiTe1.2(Ni0.833Te) NiTe1.1(Ni0.908Te) NiTeNiTe0.667(Ni1.5Te)
    M/(g·mol-1)313.893285.311250.093211.813199.05358.693127.600143.802
    n2.0001.7761.5001.2001.1000.000-0.667
    ρ/(g·cm-3)7.7017.5657.3637.0866.9768.910-8.126
    Table 3. Density (ρ), molar mass (M) and moles of the bound Te per mole substance
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    Xin MIAO, Shiqiang YAN, Jindou WEI, Chao WU, Wenhao FAN, Shaoping CHEN. Interface Layer of Te-based Thermoelectric Device: Abnormal Growth and Interface Stability[J]. Journal of Inorganic Materials, 2024, 39(8): 903
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