Fig. 1. Hall effect diagram

Fig. 2. Diagram of a thin film sample for Hall test

Fig. 3. Schematic diagram of the growing system of MBE

Fig. 4. Structure diagram of mechano chemical polishing

Fig. 5. Structure diagram of n doped InAs/GaSb type Ⅱ superlattice film

Fig. 6. Structure diagram of p doped InAs/GaSb type Ⅱ superlattice film

Fig. 7. (a) The electrical characteristics of n doped InAs/GaSb type Ⅱ superlattice film, it indicates that the change of carrier concentration with different thinkness of GaSb substrate; (b) The electrical characteristics of n doped InAs/GaSb type Ⅱ superlattice film, it is the change of mobility with different thinkness of GaSb substrate

Fig. 8. The electrical characteristics of p doped InAs/GaSb type Ⅱ superlattice film. (a) indicates that the change of carrier concentration with different thinkness of GaSb substrate; (b) is the change of mobility with different thinkness of GaSb substrate

Table 1. Hall test results of n doped InAs/GaSb type Ⅱ superlattice film with different thinkness of GaSb substrate

Table 2. Hall test results of p doped InAs/GaSb type Ⅱ superlattice film with different thinkness of GaSb substrate