[1] S CIVIS, V HORKA, T SIMECEK et al. GaSb based lasers operating near 2-3μm for high resolution absorption spectroscopy. Spectrochim Acta: Part A, 61, 3066(2005).

[2] T HOSODA, T FENG, L SHTERENGAS et al. High power cascade diode lasers emitting near 2μm. Appl Phys Lett, 108, 1311109(2016).

[3] H I ZHANG, J CALLAWAY. Energy-band structure and optical properties of GaSb. Phys Rev, 181, 1163(1969).

[4] R AHMED, E A FAZAL, S J HASHEMIFAR et al. Physical properties of Ⅲ-antiminodes: a first principles study. Commun Theor Phys, 52, 527(2009).

[5] W F SCHOTTKY, M B BEVER. On the thermodynamic properties of the Ⅲ-Ⅴ compouns InSb, GaSb, and InAs. Acta Metallurg, 6, 320(1958).

[6] A G MILNES, A Y POLYAKOV. Gallium antimonide device related properties. Solid State Electron, 36, 803(1993).

[7] Y WEI, A GIN, M RAZAGHI et al. Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared app;ocations. Appl Phys Lett, 80, 3262(2002).

[8] YU Shengtao. Research on emitting layer preparation of GaSb photocathode by MOCVD[D]. Changchun: Changchun University of Science Technology, 2017. (in Chinese)

[10] Shupei JIN, Yunong HU, Ming LIU et al. Study on carrier characteristics of Te doped GaSb materials. Laser & Infrared, 54, 561-568(2018).

[11] K ALFARAMAWI. Determination of the hole mobility and effective Hall factor of p -type GaSb. The European Physical Journal Plus, 126(2011).

[12] Haiyan LI, Lingxia CAO, Zixian CHEN et al. Development of chip back thinning technology for large array indium antimonide probe. Infrared, 44, 8-12(2023).

[13] Zifu BIAN, Hui LI, Shihai XU et al. Study on CMP process of GaSb single chip. Micro Nano Electronics Technology, 54, 797-800(2017).

[14] XU Longdao. Dictionary of Physics [M]. Beijing: Science Press, 2007. (in Chinese)