• Photonics Research
  • Vol. 13, Issue 4, 935 (2025)
Qinfen Huang1,2, Zhiwei Fang1,2,3,7, Zhe Wang2, Yiran Zhu1..., Jian Liu1, Yuan Zhou4, Jianping Yu2, Min Wang2 and Ya Cheng1,2,3,4,*|Show fewer author(s)
Author Affiliations
  • 1State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
  • 2The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
  • 3Hefei National Laboratory, Hefei 230088, China
  • 4State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
  • 7e-mail: zwfang@phy.ecnu.edu.cn
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    DOI: 10.1364/PRJ.544945 Cite this Article Set citation alerts
    Qinfen Huang, Zhiwei Fang, Zhe Wang, Yiran Zhu, Jian Liu, Yuan Zhou, Jianping Yu, Min Wang, Ya Cheng, "On-chip tunable single-mode high-power narrow-linewidth Fabry–Perot microcavity laser on Yb3+-doped thin-film lithium niobate," Photonics Res. 13, 935 (2025) Copy Citation Text show less
    Simulated mode field distributions of 500 μm×4.4 μm 2×2 MMIs at (a) 1060 nm, (c) 1030 nm, and (e) 976 nm, respectively. False-color infrared images generated via MATLAB at the two output ports of the actual fabricated MMI at (b) 1060 nm, (d) 1030 nm, and (f) 976 nm, respectively.
    Fig. 1. Simulated mode field distributions of 500  μm×4.4  μm2×2 MMIs at (a) 1060 nm, (c) 1030 nm, and (e) 976 nm, respectively. False-color infrared images generated via MATLAB at the two output ports of the actual fabricated MMI at (b) 1060 nm, (d) 1030 nm, and (f) 976 nm, respectively.
    (a) Optical microscope image of a Yb:TFLN FP cavity. (b) Zoomed-in optical microscope images of a complete MMI image that is 500 μm long. (c) Coupling region of the MMI with a width of 4.4 μm. (d) The gap between the two microelectrodes is 10 μm.
    Fig. 2. (a) Optical microscope image of a Yb:TFLN FP cavity. (b) Zoomed-in optical microscope images of a complete MMI image that is 500 μm long. (c) Coupling region of the MMI with a width of 4.4 μm. (d) The gap between the two microelectrodes is 10 μm.
    (a) Experimental setup used to characterize the Yb:TFLN FP cavity. The inset shows the energy level diagram of Yb3+ ions, the absorption and emission spectra of Yb:TFLN. (Pump, pump source; WDM, wavelength-division multiplexer; CTL, continuously tunable laser; PC, polarization controller; PD, photodetector; OSA, optical spectrum analyzer.) Normalized transmission spectra and Lorentz fitting (orange curves) around (b) 1060 nm and (c) 1030 nm for the 1030-FP laser and at (d) 976 nm for the 1060-FP laser.
    Fig. 3. (a) Experimental setup used to characterize the Yb:TFLN FP cavity. The inset shows the energy level diagram of Yb3+ ions, the absorption and emission spectra of Yb:TFLN. (Pump, pump source; WDM, wavelength-division multiplexer; CTL, continuously tunable laser; PC, polarization controller; PD, photodetector; OSA, optical spectrum analyzer.) Normalized transmission spectra and Lorentz fitting (orange curves) around (b) 1060 nm and (c) 1030 nm for the 1030-FP laser and at (d) 976 nm for the 1060-FP laser.
    Lasing characterization of the Yb:TFLN FP cavity under a bidirectional pump with two 976 nm pump lasers. (a) Output optical spectrum of the 1030-FP laser from 1000 to 1100 nm. (b) Enlarged spectrum around a wavelength of 1029.6 nm; the lasing peak is fitted with a Lorentzian line shape (orange); the inset shows an infrared image of the mode-field distribution at 1030 nm. (c) On-chip laser power of the 1030-FP laser versus the input pump power. (d) Output optical spectral signal over a wide sweep of 100 nm of the 1060-FP laser. (e) Spectral amplification near 1062.6 nm; the inset shows an infrared image of the output port of the 1060-FP laser at 1060 nm. (f) Plot of the on-chip output power versus the input pump power of the 1060-FP laser.
    Fig. 4. Lasing characterization of the Yb:TFLN FP cavity under a bidirectional pump with two 976 nm pump lasers. (a) Output optical spectrum of the 1030-FP laser from 1000 to 1100 nm. (b) Enlarged spectrum around a wavelength of 1029.6 nm; the lasing peak is fitted with a Lorentzian line shape (orange); the inset shows an infrared image of the mode-field distribution at 1030 nm. (c) On-chip laser power of the 1030-FP laser versus the input pump power. (d) Output optical spectral signal over a wide sweep of 100 nm of the 1060-FP laser. (e) Spectral amplification near 1062.6 nm; the inset shows an infrared image of the output port of the 1060-FP laser at 1060 nm. (f) Plot of the on-chip output power versus the input pump power of the 1060-FP laser.
    Wavelength tunability with applied voltages through microelectrodes. (a) Normalized laser output at voltages of −6 V,−3 V, 0 V, +3 V, and +6 V; the inset shows the probes used to connect the microelectrodes and DC power supply. (b) Linear relationship between the difference in wavelength and voltage applied to the electrodes.
    Fig. 5. Wavelength tunability with applied voltages through microelectrodes. (a) Normalized laser output at voltages of 6  V,3  V, 0 V, +3  V, and +6  V; the inset shows the probes used to connect the microelectrodes and DC power supply. (b) Linear relationship between the difference in wavelength and voltage applied to the electrodes.
    Qinfen Huang, Zhiwei Fang, Zhe Wang, Yiran Zhu, Jian Liu, Yuan Zhou, Jianping Yu, Min Wang, Ya Cheng, "On-chip tunable single-mode high-power narrow-linewidth Fabry–Perot microcavity laser on Yb3+-doped thin-film lithium niobate," Photonics Res. 13, 935 (2025)
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