• Optics and Precision Engineering
  • Vol. 32, Issue 7, 956 (2024)
Zhaoyu LI, Zihao LIU, Yaoying WANG, Lirong QIU, and Shuai YANG*
Author Affiliations
  • MIIT Key Laboratory of Complex-field Intelligent Exploration, Beijing Institute of Technology, School of Optics and Photonics, Beijing Institute of Technology, Beijing100081, China
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    DOI: 10.37188/OPE.20243207.0956 Cite this Article
    Zhaoyu LI, Zihao LIU, Yaoying WANG, Lirong QIU, Shuai YANG. High-precision laser confocal measurement of semiconductor wafer thickness[J]. Optics and Precision Engineering, 2024, 32(7): 956 Copy Citation Text show less

    Abstract

    Addressing the need for precise non-contact measurement of semiconductor wafer thickness, this study introduces a method based on laser confocal technology that ensures remarkable accuracy. It utilizes a voice coil nanodisplacement platform for high-resolution actuation of a laser confocal optical probe, enabling precise axial scanning. This method relies on identifying the peak points on the confocal laser's axial response curve, which are indicative of the objective lens's focal point, to accurately align and position the wafer's upper and lower surfaces. By accurately calculating the physical coordinates of each sampling point on the wafer surface through ray tracing algorithms, this technique achieves high-precision non-contact measurement of wafer thickness. A specialized laser confocal sensor for semiconductor wafer thickness measurement was developed, showcasing an axial resolution of under 5 nm, an axial scanning range of up to 5.7 mm, and repeatability in thickness measurement of under 100 nm across six wafer types. The process takes less than 400 ms for a single wafer. This research successfully applies confocal focusing technology to semiconductor measurement, offering a novel solution for high-precision, non-destructive, online wafer thickness measurement.
    Iu=201expjuρ2ρdρ2=sin(u/2)u/22(1)

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    u=πDL2/2λf02z(2)

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    Iz=sinc2πDL2z4λf02(3)

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    Itotalu=2i=1~NKi01expj(u-ui)ρ2ρdρ2(4)

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    Topt=ZA-ZB(5)

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    Tphs(n,R,Topt,α)=R+nnairsinαsinφ(Topt-R)(6)

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    Tphs(n,R,Topt,α)=tanαtanarcsin(nnairsinα)Topt(7)

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    Tphs=0arcsin(NA)Tphsnair,n,R,Topt,αdαarcsinNA=0arcsin(NA)Topttanα/tanarcsin(nnairsinα)dαarcsinNA.(8)

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    ZB=ZA+Tphs(9)

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    Δu=λ2πNA21SNRI(u)/umaxΔv=0.436λNA(10)

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    Δz=λ2πNA2Δu=1.98 μm(11)

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    MOP=2λπf0DL2uM(12)

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    I(v,u)=0vd201PC(ρ)PO(ρ)exp(i(u)ρ2)J0(vρ)ρdρ2vdv.(13)

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    rd=2vdλf0πDL(14)

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    δ1=0.64λSNRSmax(2NA)23.74 nm(15)

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    δ2=15 nm(16)

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    δ3=i=110(εi-ε¯)2N-1(17)

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    δ3(Si)=17 nm(18)

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    δSi=δ12+δ22+δ3(Si)2+δ4233 nm(19)

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    Zhaoyu LI, Zihao LIU, Yaoying WANG, Lirong QIU, Shuai YANG. High-precision laser confocal measurement of semiconductor wafer thickness[J]. Optics and Precision Engineering, 2024, 32(7): 956
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