Resonant tunneling which is the tunneling probability of electron in a certain energy value in the vicinity of the form of a sharp peak in tunneling, is by far the most promising application to the actual circuit and system of quantum devices, characterized by the rapid response speed of device. The transfer matrix method was used to calculate relations between transmission coefficient of the symmetric double-barrier, three-barrier quantum well structure strain, incident electron energy, tunneling current and bias voltage, simulated tunneling coefficient and the I-V curve of strained multi-quantum well structure. By theoretical calculation, the tunneling current peak value are in good agreement with the experimental values, which is of great importance for the design of resonant tunneling diodes and to provide theoretical guidance for the further experiments.