[1] Ma J G. Current situation and development trend of CCD and CMOS image sensors[J]. Electronic Technology & Software Engineering, 103(2017).

[2] NASA Science. The camera on the mars 2020 mission perseverance rover[EB/OL]. https://mars.nasa.gov/mars2020/spacecraft/rover/cameras/

[3] Wang J, Li G H. The application of CMOS image sensor in space remote sensing[J]. Spacecraft Recovery & Remote Sensing, 29, 42-47(2008).

[4] Wang Z J, Liu J, Xue Y Y et al. Progress of total ionizing dose radiation effects and hardening technology of CMOS image sensors[J]. Semiconductor Optoelectronics, 38, 1-7(2017).

[5] Wang Z J, Lin D S, Liu M B et al. Radiation damage effects on the CMOS active pixel sensors[J]. Semiconductor Optoelectronics, 35, 945-950, 982(2014).

[6] Virmontois C, Goiffon V, Magnan P et al. Similarities between proton and neutron induced dark current distribution in CMOS image sensors[J]. IEEE Transactions on Nuclear Science, 59, 927-936(2012).

[7] Virmontois C, Goiffon V, Magnan P et al. Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology[J]. IEEE Transactions on Nuclear Science, 57, 3101-3108(2010).

[8] Wang Z J, Xue Y Y, Jia T X et al. The experimental research of transient effects in PPD CMOS image sensors irradiated by gamma rays at different dose rates[C], 7, 124-132(2021).

[9] Wang Z J, Xue Y Y, Ma W Y et al. The experimental research of the performance degradation in PPD CMOS image sensors induced by total ionizing dose radiation effects[C], 5, 376-384(2017).

[10] Xue Y Y, Wang Z J, Chen W et al. Proton radiation effects on dark signal distribution of PPD CMOS image sensors: both TID and DDD effects[J]. Sensors, 17, 2781(2017).

[11] Xue Y Y, Wang Z J, Liu M B et al. Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods[J]. Science China Information Sciences, 60, 120402(2017).

[12] Wang Z J, Xue Y Y, Chen W et al. Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors[J]. Science China Information Sciences, 62, 069403(2019).

[13] Wang Z J, Xue Y Y, Chen W et al. Fixed pattern noise and temporal noise degradation induced by radiation effects in pinned photodiode CMOS image sensors[J]. IEEE Transactions on Nuclear Science, 65, 1264-1270(2018).

[14] Wang Z J, Xue Y Y, Chen W et al. Single particle transient response and displacement damage in CMOS image sensors induced by high energy neutrons at Back-n in CSNS facility[J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 920, 68-72(2019).

[15] Yang X, Huo Y G, Wang Z J et al. Theoretical simulation of charge transfer loss degradation of CMOS image sensor induced by displacement damage[J]. Acta Optica Sinica, 42, 0723002(2022).

[16] Cai Y L, Li Y D, Wen L et al. Radiation effects of 0.18 μm CMOS APS by proton irradiation[J]. Infrared and Laser Engineering, 49, 20190433(2020).

[17] Fu J, Li Y D, Feng J et al. Degradation characteristic of proton irradiated 8T CMOS image sensor[J]. Atomic Energy Science and Technology, 55, 2128-2134(2021).

[18] Xu S L, Lin K C, Han Y C et al. Study on γ-ray irradiation damage mode and characterization of CMOS APS camera[J]. Acta Optica Sinica, 40, 1523002(2020).

[19] Xu S L, Zou S L, Han Y C et al. Ionizing radiation response uniformity of solid-state image sensors[J]. Acta Optica Sinica, 39, 0728007(2019).

[20] Cao Z X, Zhou Y F, Li Q L et al. Design of prototype high speed CMOS image sensors[J]. Proceedings of SPIE, 8908, 89082G(2013).

[21] European Machine Vision Association. Standard for characterization of image sensors and cameras: EMVA Standard[EB/OL], 1, 3(1288). https://www.emva.org/wp-content/uploads/EMVA1288-General-4.0ReleaseCandi date.pdf

[22] Hardy T D. Effects of radiation damage on scientific charge coupled devices[D](1997).

[23] Wang Z J, Xue Y Y, Liu W L et al. H- beams irradiation effect of CMOS image sensor at Xi’an 200 MeV proton application facility[J]. Modern Applied Physics, 12, 126-130, 139(2021).

[24] Wang X Y, Rao P R, Mierop A et al. Random telegraph signal in CMOS image sensor pixels[C](2007).

[25] Karami M A, Carrara L, Niclass C et al. RTS noise characterization in single-photon avalanche diodes[J]. IEEE Electron Device Letters, 31, 692-694(2010).