Performance Enhancement of Algan-Based Deep Ultraviolet Laser Diodes with Step Superlattice Electron Blocking Layer and Wedge-Shaped Hole Blocking Layer

Aoxiang Zhang; Bingyang Ren; Fang Wang; Juin. J. Liou; Yuhuai Liu

doi:10.3788/LOP221886

Journals >Laser & Optoelectronics Progress >Volume 60 >Issue 15 >Page 1525001 > Article

Laser & Optoelectronics Progress
Vol. 60, Issue 15, 1525001 (2023)

Performance Enhancement of Algan-Based Deep Ultraviolet Laser Diodes with Step Superlattice Electron Blocking Layer and Wedge-Shaped Hole Blocking Layer

Aoxiang Zhang¹, Bingyang Ren², Fang Wang^1,3,4,5,*, Juin. J. Liou^1,3,5, and Yuhuai Liu^1,3,4,5,**

Author Affiliations

¹National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China

²School of Computer and Artificial Intelligence, Zhengzhou University, Zhengzhou 450001, Henan, China

³Institute of Intelligent Sensing, Zhengzhou University, Zhengzhou 450001, Henan, China

⁴Zhengzhou Way Do Electronics Co., Ltd., Zhengzhou 450001, Henan, China

⁵Research Institute of Industrial Technology Co., Ltd., Zhengzhou University, Zhengzhou, Henan 450001, China

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DOI: 10.3788/LOP221886 Cite this Article Set citation alerts

Aoxiang Zhang, Bingyang Ren, Fang Wang, Juin. J. Liou, Yuhuai Liu. Performance Enhancement of Algan-Based Deep Ultraviolet Laser Diodes with Step Superlattice Electron Blocking Layer and Wedge-Shaped Hole Blocking Layer[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1525001 Copy Citation Text

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Abstract

The step superlattice (SSL) electron blocking layer (EBL) and wedge-shaped (WS) hole blocking layer (HBL) are proposed to improve the carrier injection efficiency, and optimize the performance of the deep ultraviolet laser diodes (DUV LDs). The Crosslight software is used to simulate the DUV LDs with rectangular EBL and HBL, rectangular superlattice (RSL) EBL and tower-shaped (TS) HBL, and SSL EBL and WS HBL, respectively. The simulation results indicate that SSL EBL and WS HBL increase the carrier injection in the quantum wells (QWs), reduce the carrier leakage in the non-active regions, increase radiation recombination rate, reduce the threshold voltage and threshold current, and increase the output power and the electro-optical conversion efficiency of DUV LDs more effectively.

Keywords

AlGaN blocking layers deep ultraviolet laser diodes lasers step supperlattice