Performance Enhancement of Algan-Based Deep Ultraviolet Laser Diodes with Step Superlattice Electron Blocking Layer and Wedge-Shaped Hole Blocking Layer

Aoxiang Zhang; Bingyang Ren; Fang Wang; Juin. J. Liou; Yuhuai Liu

doi:10.3788/LOP221886

Journals >Laser & Optoelectronics Progress >Volume 60 >Issue 15 >Page 1525001 > Article

Laser & Optoelectronics Progress
Vol. 60, Issue 15, 1525001 (2023)

Performance Enhancement of Algan-Based Deep Ultraviolet Laser Diodes with Step Superlattice Electron Blocking Layer and Wedge-Shaped Hole Blocking Layer

Aoxiang Zhang¹, Bingyang Ren², Fang Wang^1,3,4,5,*, Juin. J. Liou^1,3,5, and Yuhuai Liu^1,3,4,5,**

Author Affiliations

¹National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China

²School of Computer and Artificial Intelligence, Zhengzhou University, Zhengzhou 450001, Henan, China

³Institute of Intelligent Sensing, Zhengzhou University, Zhengzhou 450001, Henan, China

⁴Zhengzhou Way Do Electronics Co., Ltd., Zhengzhou 450001, Henan, China

⁵Research Institute of Industrial Technology Co., Ltd., Zhengzhou University, Zhengzhou, Henan 450001, China

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DOI: 10.3788/LOP221886 Cite this Article Set citation alerts

Aoxiang Zhang, Bingyang Ren, Fang Wang, Juin. J. Liou, Yuhuai Liu. Performance Enhancement of Algan-Based Deep Ultraviolet Laser Diodes with Step Superlattice Electron Blocking Layer and Wedge-Shaped Hole Blocking Layer[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1525001 Copy Citation Text

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