Aoxiang Zhang, Bingyang Ren, Fang Wang, Juin. J. Liou, Yuhuai Liu. Performance Enhancement of Algan-Based Deep Ultraviolet Laser Diodes with Step Superlattice Electron Blocking Layer and Wedge-Shaped Hole Blocking Layer[J]. Laser & Optoelectronics Progress, 2023, 60(15): 1525001
- Laser & Optoelectronics Progress
- Vol. 60, Issue 15, 1525001 (2023)
Fig. 1. Schematic diagram of basic structure of DUV LDs
Fig. 2. Schematic diagram of aluminum component change. (a) RSL EBL; (b)TS HBL; (c) SSL EBL; (d) WS HBL
Fig. 3. Band diagram and quasi-Fermi level diagram. (a) Structure A; (b) structure B; (c) structure C
Fig. 4. Distribution of carrier concentration. (a) Electron concentration in the QWs; (b) hole concentration in the QWs; (c) electron leakage in the p-type region; (d) hole leakage in the n-type region
Fig. 5. Experimental results. (a) Radiation recombination rate; (b) P-I curves
Fig. 6. Experimental results. (a) I-V curves of three structures; (b) electro-optical conversion efficiency of three structures
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